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inchange semiconductor isc product specification isc silicon pnp power transistor 2SB720 description high collector-emitter breakdown voltage- : v (br)ceo = -200v(min) wide area of safe operation complement to type 2sd760 applications designed for power amplifier and tv vertical deflection output applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage -200 v v ceo collector-emitter voltage -200 v v ebo emitter-base voltage -5.0 v i c collector current-continuous -2 a i cm collector current-peak -3 a p c total power dissipation@ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB720 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -5ma; i b = 0 b -200 v v (br)cbo collector-base breakdown voltage i c = -0.1ma; i e = 0 -200 v v (br)ebo emitter-base breakdown voltage i e = -0.1ma; i c = 0 -5 v v ce( sat ) collector-emitter saturation voltage i c = -500ma; i b = -50ma -1.0 v v be( sat ) base-emitter saturation voltage i c = -500ma; i b = -50ma -1.5 v i cbo collector cutoff current v cb = -200v; i e = 0 -10 a i ebo emitter cutoff current v eb = -3.0v; i c =0 -10 a h fe dc current gain i c = -150ma; v ce = -5v 35 200 f t current-gain?bandwidth product i c = -100ma; v ce = -10v 100 mhz ? h fe classifications a b c 35-70 60-120 100-200 isc website www.iscsemi.cn 2 |
Price & Availability of 2SB720 |
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